博通(Broadcom)公司的BCM2070单片蓝牙2.1+EDR解决方案,它集成了可单独使用的基带处理器和高性能的2.4GHz收发器.它能以最小的占位面积和最低成本实现蓝牙系统,同时完全和Bluetooth 2.1与以前的所有标准兼容.BCM2070可广泛应用在蜂窝和移动通信设备,PDA和低功耗嵌入通信设备以及PC机.本文介绍了BCM2070的主要性能以及优势,方框图以及在手机和PC机中典型应用框图.

BCM2070 Single-Chip Bluetooth® 2.1 + EDR HCI Solution
The Broadcom BCM2070 is a monolithic, single-chip, stand-alone baseband processor with a high performance integrated 2.4-GHz transceiver for Bluetooth + EDR applications. It is fully compliant with Bluetooth 2.1 and all prior standard features. Processed using advanced 65-nm LP CMOS technology, the BCM2070 offers unmatched integrated solution with the smallest footprint and lowest cost of implementing a Bluetooth system.
The use of the advanced 65-nm process enables the BCM2070 to achieve the lowest possible current consumption in all modes of operation.
The BCM2070 has an architecture that has been designed to take advantage of the EDR standard. Its superior integrated RF design enables much higher output power and lower input sensitivity, which makes the BCM2070 the ideal solution to support Bluetooth EDR. The built-in Class 1 PA, which is capable of transmitting 10 dBm output power, can be enabled with 1.8V power supply. Together with Broadcom’s leading Packet Loss Concealment (PLC) technology, which effectively reduces packet loss and bit error rates, the BCM2070 can effectively combat interference and reduce dropped connections that result from distance and physical obstructions. These translate directly into higher and more reliable throughput and greater link-range performance. The BCM2070 also includes industry collaborative coexistence solutions with WLAN and WiMAX systems. By using Broadcom’s proprietary packet redistribution scheme, the BCM2070 is the industrys first Bluetooth product that is capable of supporting up to five simultaneous A2DP applications.
Ultra low-cost solutions can be achieved with the BCM2070 by using standard chip-on-board assembly techniques using the WLBGA package. Low-risk applications are enabled through the extensive integration of external passive and active components. All sensitive RF and analog portions of the Bluetooth radio and baseband have been integrated into the device, including the most sensitive high-frequency matching components. This eliminates the possibility of board-level interference and degradation in performance due to the environment and board-level designs. The built-in programmable voltage regulation (1.8V to 3.6V) was added to eliminate the need for an external voltage
regulator, which further reduces the overall BOM cost. The device is capable of operation using a noisy digital 1.8 to 3.6V power supply.

主要特性:

Processed with 65-nm LP CMOS technology
Built-in power amplifier to support class 1 transmit output power
Fully integrated balun and T/R switch eliminate all external RF matching components for class 1, 2, and 3 designs
Fully supports the Bluetooth 1.1, 1.2, 2.0, and 2.1 standards including 1-, 2-, and 3-Mbps EDR operation
Lowest current consumption in all modes of operation
ROM-based solution to eliminate external flash and/or EEPROM memory
Highest available Bluetooth radio performance of any single chip solution
-90 dBm typical receiver sensitivity
Programmable output power up to +12 dBm at 1.8V supply
Minimized external BOM requirements with less than 10 external passive components
Flexible set of interfaces that include up to 4 Mbps UART, USB, H4, H5, USB, SDIO, I2C, and serial/parallel flash
Fractional-N frequency synthesizer supports any crystal or TCXO source from 12 MHz to 40 MHz
Automatic calibration and frequency detection of crystal frequency
Supports applications with WLAN and WiMAX coexistence
Proprietary packet redistribution scheme allowing up to five headsets simultaneous A2DP music streaming
Supports wideband speech and packet-loss concealment for superior voice quality

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